IndiumV3, Main, Repository, bibRecord, 000905

Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits

Identifieur interne : 000905 ( Main/Repository ); précédent : 000904; suivant : 000906

Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits

Auteurs : RBID : Pascal:13-0201207

Descripteurs français

Pascal (Inist)
- Modélisation, Etude théorique, Guide onde, Réseau(arrangement), Aire sélective, Croissance sélective, Circuit intégré, Semiconducteur III-V, Composé III-V, Bande interdite, Densité élevée, Simulation ordinateur, Phase vapeur, Rayonnement synchrotron, Phosphure d'indium, Diffraction RX, Photoluminescence, Epitaxie, InP, 7855.

English descriptors

KwdEn :
- Arrays, Computerized simulation, Energy gap, Epitaxy, High density, III-V compound, III-V semiconductors, Indium phosphide, Integrated circuits, Modelling, Photoluminescence, Selective area, Selective growth, Synchrotron radiation, Theoretical study, Vapor phase, Waveguides, XRD.

Abstract

In this work, selective area growth has been used for the realization of InP based photonic integrated circuits (PICs). To predict the strain, thickness and bandgap energy variations over large and high-density multifunctional arrays, it is necessary to precisely design the shapes and positions of the dielectric masks by computational modeling. To address the mask layout density and complexity in both longitudinal and transversal direction, the use of three dimensional vapor phase model was mandatory. In each SAG region used for individual component processing, the calculated data were compared to experimental ones acquired by synchrotron-based microbeam x-ray diffraction and by micro-photoluminescence wavelength mapping. The excellent result concordance shows that both advanced modeling and characterization techniques are of importance for PIC conception and fabrication.

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits</title>
<author><name sortKey="Guillamet, R" uniqKey="Guillamet R">R. Guillamet</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON-INSA. 20 av. des buttes de Coësmes</s1>
<s2>35700 Rennes</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Rennes</settlement>
</placeName>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>III-V Lab, A Joint Venture between Alcatel-Lucent, Thales and CEA Leti, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Lagay, N" uniqKey="Lagay N">N. Lagay</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>III-V Lab, A Joint Venture between Alcatel-Lucent, Thales and CEA Leti, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Mocuta, C" uniqKey="Mocuta C">C. Mocuta</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Synchrotron SOLEIL, L'orme des merisiers</s1>
<s2>91190 St-Aubin</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">St-Aubin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Lagree, P Y" uniqKey="Lagree P">P.-Y. Lagree</name>
<affiliation wicri:level="3"><inist:fA14 i1="04"><s1>CNRS & Univ. Paris 6, UMR 7190, Institut Jean Le Rond d'Alembert, Boîte 162</s1>
<s2>75005 Paris</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Paris</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Carbone, G" uniqKey="Carbone G">G. Carbone</name>
<affiliation wicri:level="3"><inist:fA14 i1="05"><s1>ESRF, 6 rue Jules Horowitz</s1>
<s2>38000 Grenoble</s2>
<s3>FRA</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Grenoble</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Decobert, J" uniqKey="Decobert J">J. Decobert</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>III-V Lab, A Joint Venture between Alcatel-Lucent, Thales and CEA Leti, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0201207</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0201207 INIST</idno>
<idno type="RBID">Pascal:13-0201207</idno>
<idno type="wicri:Area/Main/Corpus">000C75</idno>
<idno type="wicri:Area/Main/Repository">000905</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term>
<term>Computerized simulation</term>
<term>Energy gap</term>
<term>Epitaxy</term>
<term>High density</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium phosphide</term>
<term>Integrated circuits</term>
<term>Modelling</term>
<term>Photoluminescence</term>
<term>Selective area</term>
<term>Selective growth</term>
<term>Synchrotron radiation</term>
<term>Theoretical study</term>
<term>Vapor phase</term>
<term>Waveguides</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Modélisation</term>
<term>Etude théorique</term>
<term>Guide onde</term>
<term>Réseau(arrangement)</term>
<term>Aire sélective</term>
<term>Croissance sélective</term>
<term>Circuit intégré</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Bande interdite</term>
<term>Densité élevée</term>
<term>Simulation ordinateur</term>
<term>Phase vapeur</term>
<term>Rayonnement synchrotron</term>
<term>Phosphure d'indium</term>
<term>Diffraction RX</term>
<term>Photoluminescence</term>
<term>Epitaxie</term>
<term>InP</term>
<term>7855</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this work, selective area growth has been used for the realization of InP based photonic integrated circuits (PICs). To predict the strain, thickness and bandgap energy variations over large and high-density multifunctional arrays, it is necessary to precisely design the shapes and positions of the dielectric masks by computational modeling. To address the mask layout density and complexity in both longitudinal and transversal direction, the use of three dimensional vapor phase model was mandatory. In each SAG region used for individual component processing, the calculated data were compared to experimental ones acquired by synchrotron-based microbeam x-ray diffraction and by micro-photoluminescence wavelength mapping. The excellent result concordance shows that both advanced modeling and characterization techniques are of importance for PIC conception and fabrication.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>370</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>16th International Conference on Metalorganic Vapor Phase Epitaxy</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>GUILLAMET (R.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LAGAY (N.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MOCUTA (C.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>LAGREE (P.-Y.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>CARBONE (G.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>DECOBERT (J.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>JONG KYU KIM</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>KUECH (Thomas F.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>CANEAU (Catherine)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>REDWING (Joan M.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>DADGAR (Armin)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>FOTON-INSA. 20 av. des buttes de Coësmes</s1>
<s2>35700 Rennes</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>III-V Lab, A Joint Venture between Alcatel-Lucent, Thales and CEA Leti, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Synchrotron SOLEIL, L'orme des merisiers</s1>
<s2>91190 St-Aubin</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>CNRS & Univ. Paris 6, UMR 7190, Institut Jean Le Rond d'Alembert, Boîte 162</s1>
<s2>75005 Paris</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>ESRF, 6 rue Jules Horowitz</s1>
<s2>38000 Grenoble</s2>
<s3>FRA</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>128-132</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000500688410270</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>9 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0201207</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this work, selective area growth has been used for the realization of InP based photonic integrated circuits (PICs). To predict the strain, thickness and bandgap energy variations over large and high-density multifunctional arrays, it is necessary to precisely design the shapes and positions of the dielectric masks by computational modeling. To address the mask layout density and complexity in both longitudinal and transversal direction, the use of three dimensional vapor phase model was mandatory. In each SAG region used for individual component processing, the calculated data were compared to experimental ones acquired by synchrotron-based microbeam x-ray diffraction and by micro-photoluminescence wavelength mapping. The excellent result concordance shows that both advanced modeling and characterization techniques are of importance for PIC conception and fabrication.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H55</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Modélisation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Modelling</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Etude théorique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Theoretical study</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Guide onde</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Waveguides</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Réseau(arrangement)</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Arrays</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Aire sélective</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Selective area</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Croissance sélective</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Selective growth</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Circuit intégré</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Integrated circuits</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Bande interdite</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Energy gap</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Densité élevée</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>High density</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Densidad elevada</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Simulation ordinateur</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Computerized simulation</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Phase vapeur</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Vapor phase</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Rayonnement synchrotron</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Synchrotron radiation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>XRD</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Epitaxie</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Epitaxy</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>7855</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fN21><s1>182</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>ICMOVPE-XVI International Conference on Metalorganic Vapor Phase Epitaxy</s1>
<s2>16</s2>
<s3>Busan KOR</s3>
<s4>2012-05-20</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits

Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits

Descripteurs français

English descriptors

Abstract

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